US Patent Issued to Micron Technology on July 7 for "Partial blocks word line read offsets" (California Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,675,224, issued on July 7, was assigned to Micron Technology Inc. (Boise, Idaho).

"Partial blocks word line read offsets" was invented by Christina Papagianni (San Jose, Calif.), Murong Lang (San Jose, Calif.) and Guang Hu (Mountain View, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory sub-system controller selectively adjusts read threshold voltages on certain word lines for partially written memory blocks of a memory sub-system. The controller generates a request to read a portion of a set of memory components. The controller, in response to determining that the portion corresponds to a partially programmed block (PB), selectively modifi...