US Patent Issued to Micron Technology on July 15 for "Memory devices including strings of memory cells and related systems" (Singaporean, American Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,916, issued on July 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory devices including strings of memory cells and related systems" was invented by David A. Daycock (Boise, Idaho) and Jonghun Kim (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming an electronic device comprises forming a stack structure comprising vertically alternating insulative structures and additional insulative structures, and forming pillars comprising a channel material and at least one dielectric material vertically extending through the stack structure. The method comprises removing the additional insulative structures to form ce...