US Patent Issued to Micron Technology on Jan. 27 for "Semiconductor device having memory cell array divided into plural memory mats" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,048, issued on Jan. 27, was assigned to Micron Technology Inc. (Boise, Idaho).

"Semiconductor device having memory cell array divided into plural memory mats" was invented by Keisuke Fujishiro (Kanagawa, Japan) and Yoshifumi Mochida (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus that includes a plurality of first memory mats each including a plurality of common column sections except for at least one associated column section, the at least one associated column sections being selected by respective column addresses which are different from one another; and a second memory mat including the at least one corresponding col...