US Patent Issued to Micron Technology on Jan. 20 for "Microelectronic devices including multiple dies respectively including vertical stacks of memory cells, and related electronic systems" (Idaho Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,778, issued on Jan. 20, was assigned to Micron Technology Inc. (Boise, Idaho).

"Microelectronic devices including multiple dies respectively including vertical stacks of memory cells, and related electronic systems" was invented by Fatma Arzum Simsek-Ege (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device comprises a first microelectronic device structure, a second microelectronic device structure vertically neighboring the first microelectronic device structure, and a third microelectronic device structure vertically neighboring the second microelectronic device structure. The first microelectronic device structure...