US Patent Issued to Micron Technology on Jan. 20 for "Methods for fusion bonding semiconductor devices to temporary carrier wafers with hydrophobic regions for reduced bond strength, and semiconductor device assemblies formed by the same" (Idaho Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,708, issued on Jan. 20, was assigned to Micron Technology Inc. (Boise, Idaho).

"Methods for fusion bonding semiconductor devices to temporary carrier wafers with hydrophobic regions for reduced bond strength, and semiconductor device assemblies formed by the same" was invented by Wei Zhou (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of making a semiconductor device assembly are provided. The methods can comprise providing a first semiconductor device having a first dielectric material at a first surface, providing a carrier wafer having a second dielectric material at a second surface, and forming a dielectric-dielectric bond...