US Patent Issued to Micron Technology on Jan. 13 for "Vertical three-dimensional memory with vertical channel" (Idaho Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,978, issued on Jan. 13, was assigned to Micron Technology Inc. (Boise, Idaho).

"Vertical three-dimensional memory with vertical channel" was invented by Kamal M. Karda (Boise, Idaho), Haitao Liu (Boise, Idaho) and Litao Yang (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, methods and apparatus are provided for an array of vertically stacked memory cells having vertically oriented access devices having a first source/drain region and a second source drain region vertically separated by a channel region, and gates opposing the channel region, vertically oriented access lines coupled to the gates and separated from a channel regio...