US Patent Issued to Micron Technology on Jan. 13 for "Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" (Idaho Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,536, issued on Jan. 13, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" was invented by Tom George (Boise, Idaho), Rita J. Klein (Boise, Idaho), Daniel Billingsley (Meridian, Idaho), Pengyuan Zheng (Boise, Idaho) and Yongjun Jeff Hu (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Strings of...