US Patent Issued to Micron Technology on Feb. 3 for "Memory device including initial charging phase for double sense operation" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,542,184, issued on Feb. 3, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device including initial charging phase for double sense operation" was invented by Shigekazu Yamada (Suginamiku, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses and methods using first and second data lines coupled to respective first and second memory cell strings; an access line shared by first and second memory cells of the first and second memory cell strings, respectively; and a control unit including circuitry to perform operations including charging the first data line to a first voltage during a first time interval ...