US Patent Issued to Micron Technology on Feb. 24 for "Electronic devices comprising a stack structure, a source contact, and a dielectric material" (American, Japanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,787, issued on Feb. 24, was assigned to Micron Technology Inc. (Boise, Idaho).

"Electronic devices comprising a stack structure, a source contact, and a dielectric material" was invented by Michael A. Lindemann (Boise, Idaho), Collin Howder (Boise, Idaho), Yoshiaki Fukuzumi (Kanagawa, Japan) and Richard J. Hill (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Electronic devices comprising a doped dielectric material adjacent to a source contact, tiers of alternating conductive materials and dielectric materials adjacent to the doped dielectric material, and pillars extending through the tiers, the doped dielectric material, and the sourc...