US Patent Issued to Micron Technology on Feb. 24 for "Corrective read with parallel auto-read calibration in a memory sub-system" (California Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,561,072, issued on Feb. 24, was assigned to Micron Technology Inc. (Boise, Idaho).

"Corrective read with parallel auto-read calibration in a memory sub-system" was invented by Jun Wan (San Jose, Calif.), Ying Yu Tai (Mountain View, Calif.), Zhenming Zhou (San Jose, Calif.) and Yu-Chung Lien (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Processing logic in a memory device detects a trigger for a corrective read operation on one or more memory cells associated with a selected wordline of a memory array of a memory device and performs an auto-read calibration operation to identify a center voltage. The processing logic further determines...