US Patent Issued to Micron Technology on Feb. 17 for "Integrated circuitry, memory circuitry comprising strings of memory cells, and method of forming integrated circuitry" (Idaho Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,277, issued on Feb. 17, was assigned to Micron Technology Inc. (Boise, Idaho).

"Integrated circuitry, memory circuitry comprising strings of memory cells, and method of forming integrated circuitry" was invented by Shuangqiang Luo (Boise, Idaho), Christopher Larsen (Boise, Idaho) and Rui Zhang (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory circuitry comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers in ...