ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,554,434, issued on Feb. 17, was assigned to Micron Technology Inc. (Boise, Idaho).
"Input voltage degradation detection" was invented by Sumit Tayal (Brentwood, Calif.), Joseph A. Oberle (Sunnyvale, Calif.), David C. Sastry (El Dorado Hills, Calif.) and Anil Kumar Agarwal (Boise, Idaho).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes performing a self-initiated test memory operation of a memory device in a memory sub-system and detecting, via a sensor circuit, an input voltage or input current of the memory device or the memory sub-system. The method further includes determining whether the input voltage or the input current meets a degr...