US Patent Issued to Micron Technology on Feb. 10 for "Read operations for active regions of a memory device" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,547,328, issued on Feb. 10, was assigned to Micron Technology Inc. (Boise, Idaho).

"Read operations for active regions of a memory device" was invented by Bin Zhao (Shanghai) and Lingyun Wang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for read operations for active regions of a memory device are described. A memory system that includes a non-volatile memory device may receive a command to enter a first power mode. Before entering the first power mode, the memory system may store an indication of the active regions of the non-volatile memory device that are active for use as part of a host performance booster (...