US Patent Issued to Micron Technology on Dec. 23 for "Program refresh with gate-induced drain leakage" (Japanese, American Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,897, issued on Dec. 23, was assigned to Micron Technology Inc. (Boise, Idaho).

"Program refresh with gate-induced drain leakage" was invented by Huai-Yuan Tseng (San Ramon, Calif.), Eric N. Lee (San Jose, Calif.), Akira Goda (Tokyo), Kishore Kumar Muchherla (San Jose, Calif.) and Tomoharu Tanaka (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory array including wordlines and at least one string of cells. Each cell of the at least one string of cells is addressable by a respective wordline. The memory device further includes control logic, operatively coupled to the memory array, to perform operations in...