US Patent Issued to Micron Technology on Dec. 2 for "Wordline boost by charge sharing in a memory device" (Italian Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,835, issued on Dec. 2, was assigned to Micron Technology Inc. (Boise, Idaho).

"Wordline boost by charge sharing in a memory device" was invented by Mattia Robustelli (Milan) and Innocenzo Tortorelli (Cernusco sul Naviglio, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, methods, and apparatus related to memory devices. In one approach, a memory device includes a memory array. The memory array has first tiles and second tiles. Each of the tiles includes memory cells. Wordlines are configured to select the memory cells in the first and second tiles. A controller programs the selected memory cells by applying a first voltage to a first wor...