ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,839, issued on Dec. 2, was assigned to Micron Technology Inc. (Boise, Idaho).
"Search for an optimized read voltage" was invented by Patrick Robert Khayat (San Diego), James Fitzpatrick (Laguna Niguel, Calif.), AbdelHakim S. Alhussien (San Jose, Calif.) and Sivagnanam Parthasarathy (Carlsbad, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device to search for a voltage optimized to read a group of memory cells. In response to a read command, the memory device measures first signal and noise characteristics of the memory cells by reading the memory cells at first test voltages. Based on the first signal and noise characteristics, the m...