US Patent Issued to Micron Technology on Dec. 2 for "Memory circuitry and methods used in forming memory circuitry" (Idaho Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,439, issued on Dec. 2, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory circuitry and methods used in forming memory circuitry" was invented by Darwin A. Clampitt (Wilder, Idaho), Patrick White (Kuna, Idaho), Kevin Y. Titus (Meridian, Idaho) and Steven P. Turini (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming memory circuitry comprises forming a stack where strings of memory cells will be formed and a select-gate region directly above the stack. The stack comprises vertically-alternating different-composition first tiers and second tiers having lower channel openings extending there-through. The sel...