US Patent Issued to Micron Technology on Aug. 4 for "Caching for multiple-level memory device" (American, Indian Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,699,533, issued on Aug. 4, was assigned to Micron Technology Inc. (Boise, Idaho).

"Caching for multiple-level memory device" was invented by Reshmi Basu (Boise, Idaho), Jonathan S. Parry (Boise, Idaho) and Nitul Gohain (Bangalore, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for caching for a multiple-level memory device are described. First data may be received for writing to a memory device that include multiple-level cells that are programmable using multiple programming modes. Based on receiving the first data, the first data may be written to first multiple-level cells using a first programming mode. Based on wr...