US Patent Issued to Micron Technology on Aug. 4 for "Apparatuses including metal-insulator-metal capacitor and methods for forming same" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,992, issued on Aug. 4, was assigned to Micron Technology Inc. (Boise, Idaho).

"Apparatuses including metal-insulator-metal capacitor and methods for forming same" was invented by Shigeru Sugioka (Higashihiroshima, Japan), Hidenori Yamaguchi (Higashihiroshima, Japan) and Keizo Kawakita (Higashihiroshima, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an opening formed in a surface of an insulating layer, and a lower metal layer on the surface of the insulating layer, and sidewalls and a bottom surface of the opening in the surface of the insulating layer. The sidewalls are tapered inwardly from the surface of t...