US Patent Issued to Micron Technology on Aug. 25 for "Memory device assembly with a leaker device" (American, Italian Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,763, issued on Aug. 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device assembly with a leaker device" was invented by Giorgio Servalli (Fara Gera d'Adda, Italy) and Ashonita A. Chavan (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, an integrated assembly includes a conductive plate, a top electrode in contact with the conductive plate and shared by a plurality of bottom electrodes included in the integrated assembly, a bottom electrode having a top surface, a bottom surface, and an ext...