US Patent Issued to Micron Technology on Aug. 25 for "Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" (Idaho Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,129, issued on Aug. 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" was invented by Damir Fazil (Boise, Idaho), Indra V. Chary (Boise, Idaho), Nancy M. Lomeli (Boise, Idaho) and Rajasekhar Venigalla (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array comprising strings of memory cells comprise laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above a conductor tier. Strings of memory cells comprise...