US Patent Issued to Micron Technology on Aug. 25 for "Memory array and method used in forming a memory array comprising strings of memory cells" (Idaho Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,743, issued on Aug. 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory array and method used in forming a memory array comprising strings of memory cells" was invented by John D. Hopkins (Meridian, Idaho), Jordan D. Greenlee (Boise, Idaho), Nancy M. Lomeli (Boise, Idaho) and Alyssa N. Scarbrough (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Dummy pillars extend ...