US Patent Issued to Micron Technology on Aug. 25 for "Integrated memory comprising secondary access devices between digit lines and primary access devices" (Idaho Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,721, issued on Aug. 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Integrated memory comprising secondary access devices between digit lines and primary access devices" was invented by Scott J. Derner (Boise, Idaho) and Charles L. Ingalls (Meridian, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include an integrated assembly having a primary access transistor. The primary access transistor has a first source/drain region and a second source/drain region. The first and second source/drain regions are coupled to one another when the primary access transistor is in an ON mode, and are not coupled to one another when...