ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,869, issued on Aug. 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Apparatus including memory word line structure" was invented by Jun Ho Lee (Higashihiroshima, Japan) and Byung Yoon Kim (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments of the disclosure provide an apparatus comprising: a word line array including a plurality of word lines each extending through a memory mat in a first horizontal direction, the plurality of word lines including first and second word lines arranged adjacent to each other in a second horizontal direction; and a word line contact of the first word line, the word line contact sep...