US Patent Issued to Micron Technology on Aug. 18 for "Program voltage selection during all levels programming of a memory device" (American, Singaporean Inventors)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,710,884, issued on Aug. 18, was assigned to Micron Technology Inc. (Boise, Idaho).

"Program voltage selection during all levels programming of a memory device" was invented by Sheyang Ning (San Jose, Calif.), Lawrence Celso Miranda (San Jose, Calif.), Jeffrey S. McNeil (Nampa, Idaho), Tomoko Ogura Iwasaki (San Jose, Calif.), Lee-eun Yu (San Jose, Calif.) and Yeang Meng Hern (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "Control logic in a memory device, identifies a set of a plurality of memory cells associated with a selected wordline to be programmed to respective programming levels during a program operation and causes a set of a plurality...