US Patent Issued to Micron Technology on Aug. 18 for "Grown bad block projection of a memory device using fast cycling" (California Inventors)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,710,881, issued on Aug. 18, was assigned to Micron Technology Inc. (Boise, Idaho).

"Grown bad block projection of a memory device using fast cycling" was invented by Yu-Chung Lien (San Jose, Calif.) and Zhenming Zhou (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Whether a program erase cycle (PEC) count of a memory device matches a checkpoint value of a set of checkpoint values is determined. First type of cycling of the plurality of blocks of the memory device is performed using a test pattern responsive to determining that the PEC count matches the checkpoint value of the set of checkpoint values. A number of grown bad blocks for th...