US Patent Issued to Micron Technology on Aug. 11 for "Multiple rank DRAMs on a same module side" (Idaho Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,704,992, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho).

"Multiple rank DRAMs on a same module side" was invented by Mohammad Ehsanul Kabir (Boise, Idaho) and Timothy Hollis (Meridian, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "An example apparatus can include a dual-rank dual-inline memory module (DIMM) device. The dual-rank DIMM device can include a plurality of dual-rank memory chip sets and each includes a first-ranked memory chip and a second-ranked memory chip. Each of the plurality of dual-rank memory chip sets can be positioned on a same side of the dual-rank DIMM device."

The patent was filed on Feb. 6, 2024...