ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,700, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho).

"Contact arrangements for transistors" was invented by Yoshikazu Moriwaki (Hiroshima, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A variety of applications can include apparatus having one or more transistors with a contact arrangement to significantly mitigate a parasitic capacitance between one or more contacts to an active area of the transistor and a gate of the transistor. One or more contact arrangements can include a contact to an active area in a position beyond a boundary of an end of the gate along a first direction, where the gate is structured along t...