US Patent Issued to Micron Technology on Aug. 11 for "Asymmetric pass through voltage for reduction of cell-to-cell interference" (Italian Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,704,969, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho).

"Asymmetric pass through voltage for reduction of cell-to-cell interference" was invented by Augusto Benvenuti (Lallio, Italy), Giovanni Maria Paolucci (Milan), Alessio Urbani (Rome), Gianpietro Carnevale (Bottanuco, Italy) and Aurelio Giancarlo Mauri (Meda, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory access operation is initiated to read a set of target memory cells of a target wordline of the memory device. During the memory access operation, a read voltage level is caused to be applied to the target wordline. During the memory access operation, a firs...