ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,464, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho).
"Vertical digit lines for semiconductor devices" was invented by Si-Woo Lee (Boise, Idaho) and Sangmin Hwang (Boise, Idaho).
According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, methods and apparatus are provided for an array of vertically stacked memory cells having horizontally oriented access devices and access lines and vertically oriented digit lines having a first source/drain region and a second source drain region separated by a channel region, and gates opposing the channel region formed fully around every surface of the channel region as gate all around (GAA)...