US Patent Issued to Micron Technology on April 14 for "Reliability gain in memory devices with adaptively selected erase policies" (American, Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,602,169, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho).

"Reliability gain in memory devices with adaptively selected erase policies" was invented by Yu-Chung Lien (San Jose, Calif.), Zhongguang Xu (San Jose, Calif.), Ronit Roneel Prakash (Kanagawa Prefecture, Japan) and Zhenming Zhou (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A system with a memory device and a processing device operatively coupled with the memory device, to perform operations including identifying a lifecycle state associated with a segment of the memory device, selecting, based on the lifecycle state, an erase policy for performing an...