US Patent Issued to mi2-factory on March 3 for "Ion implantation device with energy filter having additional thermal energy dissipation surface area" (German Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,567,559, issued on March 3, was assigned to mi2-factory GmbH (Jena, Germany).

"Ion implantation device with energy filter having additional thermal energy dissipation surface area" was invented by Florian Krippendorf (Jena, Germany) and Constantin Csato (Jena, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ion implantation device (20) comprising an energy filter (25), wherein the energy filter (25) has a thermal energy dissipation surface area, wherein the energy filter (25) comprises a membrane with a first surface and a second surface disposed opposite to the first surface, the first surface being a structured surface."

The patent was file...