ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,984, issued on Dec. 2, was assigned to METAL INDUSTRIES RESEARCH & DEVELOPMENT CENTRE (Kaohsiung, Taiwan).
"Plasma-assisted annealing system and method" was invented by Wei-Chen Tien (Chiayi, Taiwan), Cheng-Yuan Hung (Kaohsiung, Taiwan), Chang-Sin Ye (Tainan, Taiwan), Chun-Kai Huang (Kaohsiung, Taiwan) and Yii-Der Wu (Kaohsiung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma-assisted annealing system includes a high temperature furnace, a plasma-induced dissociator and a connecting duct. The plasma-induced dissociator is provided to dissociate a working gas and exhaust the dissociated working gas from its working gas outlet. Both ends...