US Patent Issued to MEISHAN BOYA ADVANCED MATERIALS on Dec. 2 for "Methods for crystal growth by replacing a sublimated target source material with a candidate source material" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,486,595, issued on Dec. 2, was assigned to MEISHAN BOYA ADVANCED MATERIALS Co. LTD. (Meishan, China).

"Methods for crystal growth by replacing a sublimated target source material with a candidate source material" was invented by Yu Wang (Meishan, China), Peng Gu (Meishan, China), Zhenxing Liang (Meishan, China) and Min Li (Meishan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The embodiments of the present disclosure disclose a method and an apparatus for crystal growth. The method for crystal growth may include: placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth; executing a growth of a cry...