US Patent Issued to MediaTek on March 17 for "Semiconductor device method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,681, issued on March 17, was assigned to MediaTek Inc. (Hsinchu City, Taiwan).

"Semiconductor device method for forming the same" was invented by Po-Chao Tsao (Hsinchu City, Taiwan) and Hsien-Hsin Lin (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a substrate, a fin structure and an epitaxial source/drain structure. The substrate includes a substrate layer and an insulator layer on the substrate layer. The fin structure is formed over the substrate, wherein the fin structure includes a gate structure and channel layers wrapped by the gate structure. The epit...