US Patent Issued to MediaTek on July 21 for "Capacitor structure and semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,974, issued on July 21, was assigned to MediaTek Inc. (Hsinchu City, Taiwan).

"Capacitor structure and semiconductor device" was invented by Je-Min Wen (Hsinchu City, Taiwan), Cheng-Hua Lin (Hsinchu City, Taiwan) and Ching-Han Jan (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor structure includes a first comb-shaped electrode, a second comb-shaped electrode, a bottom electrode, an insulator layer, and a top electrode. The first comb-shaped electrode has a first pad and first fingers connecting to the first pad. The second comb-shaped electrode has a second pad and second fingers connecting to the first pad, wherein o...