US Patent Issued to Massachusetts Institute of Technology on June 30 for "Geiger-mode avalanche photodiode arrays fabricated on silicon-on-insulator substrates" (Massachusetts Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,382, issued on June 30, was assigned to Massachusetts Institute of Technology (Cambridge, Mass.).

"Geiger-mode avalanche photodiode arrays fabricated on silicon-on-insulator substrates" was invented by Kevin Ryu (Arlington, Mass.), Joseph S. Ciampi (Westford, Mass.), Brian F. Aull (Cambridge, Mass.), Kevan Donlon (Arlington, Mass.) and Renee D. Lambert (Framingham, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Fabrication of avalanche photodiodes on a first wafer for operation in Geiger mode and integration with read-out integrated circuits (ROICs), fabricated on a second wafer, are described. Photodiode arrays are fabricated using a thin epi...