US Patent Issued to Marvell Asia on June 23 for "Gate all-around (GAA) field effect transistors (FETS) having vertical source and drain" (California Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,638, issued on June 23, was assigned to Marvell Asia Pte Ltd (Singapore).

"Gate all-around (GAA) field effect transistors (FETS) having vertical source and drain" was invented by Runzi Chang (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, includes: (a) a substrate, (b) a gate electrode, disposed on a surface of the substrate, and including a plate, orthogonal to the surface, and having openings, a longest axis of the openings is orthogonal to the surface, and (c) elements having a shape that fits in the openings, the elements (i) are orthogonal both to the surface and to the gate electrode, (ii) extend throug...