ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,333, issued on Sept. 9, was assigned to Magnolia White Corp. (Tokyo).
"Semiconductor device" was invented by Toshiki Kaneko (Tokyo) and Akihiro Hanada (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor device includes a gate electrode, a first insulating layer covering the gate electrode, an oxide semiconductor provided on the first insulating layer immediately above the gate electrode, a source electrode in contact with the oxide semiconductor, and a drain electrode in contact with the oxide semiconductor. Each of the source electrode and the drain electrode includes an oxide conductive layer in cont...