US Patent Issued to MACRONIX International on Oct. 6 for "Memory device and in-memory computing method for binarized neural network" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,754,798, issued on Oct. 6, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Memory device and in-memory computing method for binarized neural network" was invented by Wen-Che Tsai (Hsin-Chu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and an in-memory computing method are provided. The memory device is, for example, a 3D NAND flash memory and provides a storage media with high-performance and high-capacity. In the memory device, an input parser provides initial address information and initial layer activation data. A readout data sensor and comparator reads initial data corresponding to the initial addres...