US Patent Issued to MACRONIX INTERNATIONAL on Nov. 3 for "Memory device and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,287, issued on Nov. 3, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory device and manufacturing method thereof" was invented by Chih-Kai Yang (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an array region, a staircase region, a reference structure in the array region and the staircase region, a stacked structure in the array region and the staircase region, and a wall structure extending along a direction from the array region to the staircase region. The reference structure includes a conductive structure and a dielectric structure embedded within the conductive structure in...