US Patent Issued to MACRONIX International on March 31 for "Memory structure and control method for reducing layout area of memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,592,275, issued on March 31, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Memory structure and control method for reducing layout area of memory device" was invented by Feng-Min Lee (Hsinchu City, Taiwan), Yu-Yu Lin (New Taipei City, Taiwan), Po-Hao Tseng (Taichung City, Taiwan), Yu-Hsuan Lin (Taichung City, Taiwan), Wei-Lun Weng (Tainan City, Taiwan) and Wei-Fu Wang (Keelung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure includes a plurality of first transistors and a plurality of second transistors. The first transistors are arranged in a first array. First ends of the first transistors are respe...