US Patent Issued to MACRONIX INTERNATIONAL on March 24 for "Memory device and operating method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,586,643, issued on March 24, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory device and operating method thereof" was invented by Po-Hao Tseng (Taichung, Taiwan) and Feng-Min Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first memory cell including channel, source and drain structures and a charge trap layer. When a first data bit has a first logic value and a voltage signal applied to the charge trap layer has a first voltage level, a current signal flowing through the channel structure has a first current level. When the first data bit has the first logic value and the voltag...