US Patent Issued to MACRONIX INTERNATIONAL on March 17 for "Semiconductor device and a method of fabricating the same with increased effective width of the channel without increasing the width of the gate active region" (Taiwanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,715, issued on March 17, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device and a method of fabricating the same with increased effective width of the channel without increasing the width of the gate active region" was invented by I-Chen Yang (Miaoli County, Taiwan), Chun Liang Lu (Kinmen County, Taiwan), Yung-Hsiang Chen (Taipei City, Taiwan) and Yao-Wen Chang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a gate structure, a first doped region and a second doped region. The substrate has a plurality of recesses therein. A gate structure cove...