ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,666, issued on March 17, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hinschu, Taiwan).
"Memory device based on thyristors" was invented by Wei-Chen Chen (Taoyuan County, Taiwan) and Hang-Ting Lue (Zhubei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device based on thyristors, comprises the following elements. A plurality of gate structures, are continuous structures in the first direction. A plurality of bit lines, extending in a second direction substantially perpendicular to the first direction. A plurality of source lines, extending in the first direction. A plurality of channels, extending in a third direction subst...