ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,290, issued on June 30, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).
"Memory device and method of fabricating the same" was invented by Mao-Yuan Weng (Hualien County, Taiwan), Ting-Feng Liao (Hsin-chu, Taiwan) and Kuang-Wen Liu (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a memory device at least includes the following steps. A first stack structure is formed above a substrate. The first stack structure includes a plurality of first insulating layers and a plurality of first conductive layers alternately stacked. A top layer of the first stack structure includes a plurality of a...