ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,563, issued on June 2, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).
"Memory device and operation method of the same" was invented by Yu-Yu Lin (New Taipei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device comprising a memory array, a sensing circuit and a control circuit is provided. The memory array comprises a plurality of memory cells respectively having a first resistance or a second resistance greater than the first resistance. When all memory cells have the first resistance, an equivalent resistance of the memory array is equal to a first equivalent resistance. When all memory cells have the secon...