US Patent Issued to MACRONIX International on July 14 for "Memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,776, issued on July 14, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Memory device" was invented by Yuan-Chieh Chiu (Hsinchu County, Taiwan), Kuan-Ting Lu (Taichung, Taiwan) and Chiung-Kun Huang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes: an interconnect structure, a staircase structure, a dielectric layer and a stop structure. The interconnect structure is located above a substrate. The staircase structure is located above the interconnect structure. The dielectric layer is located above the interconnect structure and covers the staircase structure. The stop structure is locate...