US Patent Issued to MACRONIX INTERNATIONAL on Jan. 20 for "Memory device and operating method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,112, issued on Jan. 20, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory device and operating method thereof" was invented by Yu-Hsuan Lin (Taichung, Taiwan), Yu-Yu Lin (New Taipei, Taiwan) and Feng-Min Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first memory cell performing a logic operation. The first memory cell includes first and second switches. The first switch writes a first weight bit into a first storage node. The second switch generates a first current signal according to the first weight bit and a first input bit. The second switch receives a first bit line signa...