ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,748, issued on Feb. 24, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).
"3D bit cost scalable memory" was invented by Hsiang-Lan Lung (Ardsley, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D bit cost scalable memory device includes a stack of layers and a via electrode extending vertically through the stack of layers. The layers include a controllable conductivity layer and an electrode layer. The electrode layer has a conductor portion and a separator portion that separates the via electrode from the conductor portion of the electrode layer. At least a storage portion of the controllable conductivity layer is in electri...